Experimental Study of Resistive Bistability in Metal Oxide Junctions

摘要

We have studied resistive bistability (memory) effects in junctions based onmetal oxides, with a focus on sample-to-sample reproducibility which isnecessary for the use of such junctions as crosspoint devices of hybridCMOS/nanoelectronic circuits. Few-nm-thick layers of NbOx, CuOx and TiOx havebeen formed by thermal and plasma oxidation, at various deposition andoxidation conditions, both with or without rapid thermal post-annealing (RTA).The resistive bistability effect has been observed for all these materials,with particularly high endurance (over 1000 switching cycles) obtained forsingle-layer TiO2 junctions, and the best reproducibility reached formulti-layer junctions of the same material. Fabrication optimization hasallowed us to improve the OFF/ON resistance ratio to about 1000, but thesample-to-sample reproducibility is so far lower than that required for largescale integration.